Dislocation reduction through nucleation and growth selectivity of metal-organic chemical vapor deposition GaN
نویسندگان
چکیده
of metal-organic chemical vapor deposition GaN Wei Zhang, Peichi Liu, Biyun Jackson, Tianshu Sun, Shyh-Jer Huang, Hsiao-Chiu Hsu, Yan-Kuin Su, Shoou-Jinn Chang, Lei Li, Ding Li, Lei Wang, XiaoDong Hu, and Y. H. Xie Department of Materials Science and Engineering, University of California Los Angeles, California 90095, USA Department of Physics, University of Maryland college park, Maryland 20742, USA Advanced Optoelectronic Technology Center and Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan Department of Electrical Engineering, Kun Shan University of Technology, Yung-Kang, Tainan 710, Taiwan State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
منابع مشابه
Morphology optimization of MOCVD-grown GaN nucleation layers by the multistep technique
The heteroepitaxial growth of gallium nitride (GaN) on sapphire substrates by metal-organic chemical vapor deposition is most commonly carried out using the two-step growth process. This process involves the deposition of a thin GaN nucleation layer (NL) at a temperature of approximately 450–600 1C. The morphology of this low-temperature film after annealing is known to have a crucial effect on...
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تاریخ انتشار 2013